Skip to content Skip to navigation

Publications

Articles and Conference Proceedings 

2022

4. Liu, C., Nagler, O., Tremmel, F., Unterreitmeier, M., Frick, J. J., Gu, X. W., and Senesky, D. G. “Nanoindentation characterization of thin film stack structures by finite element analysis and experiments using acoustic emission testing.” Materials Science in Semiconductor Processing, vol. 147, pp. 106737, 2022. [PDF]

3. Krone, A., Alpert, H., Shetty, S., Senesky, D. G., Salamo, G., and Huitink, D., "High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors," Journal of Electronic Packaging, 2022. [PDF]

2. Lalwani, A. V., Yalamarthy, A. S., Alpert, H. S., Holliday, M., Eisner, S. R., Chapin, C. A., and Senesky, D. G. “Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning.” IEEE Sensors Journal, vol. 22, no. 2, pp. 1245–1251, 2022. [PDF]

1. Liu, C., Nagler, O., Tremmel, F., Unterreitmeier, M., Frick, J. J., Patil, R. P., Gu, X. W., and Senesky, D. G. “Cluster-Based Acoustic Emission Signal Processing and Loading Rate Effects Study of Nanoindentation on Thin Film Stack Structures.” Mechanical Systems and Signal Processing, vol. 165, pp. 108301, 2022. [PDF]

2021

7. Lalwani, A. V., Dong, H., Mu, L., Woo, K., Johnson, H. A., Holliday, M., Guo, J., Senesky, D. G., and Tarpeh, W. A. “Selective Aqueous Ammonia Sensors Using Electrochemical Stripping and Capacitive Detection.” AIChE Journal, Vol. 67, No. 12, pp. e17465, 2021. [PDF]

6. Heuser, T., M. Braun, P. McIntyre, and Senesky, D. G., "Electron Beam Irradiation of Gallium Nitride-on-Silicon Betavoltaics Fabricated with a Triple Mesa Etch." Journal of Applied Physics, vol. 130, no. 17, pp. 174503, 2021. [PDF]

5. Holliday, M., Manchester, Z., Senesky, D. G., "On-Orbit Implementation of Discrete Isolation Schemes for Improved Reliability of Serial Communication Buses," TechRxiv Preprint, 2021. [PDF]

4. Peterson, R., Malakoutian, M., Wang, Y., Chowdhury, S., Senesky, D. G., "Effects of Proton Irradiation on Hole Carrier Transport in Hydrogen-Terminated Diamond Surfaces," arXiv Preprint, 2021. [PDF]

3. Holliday, M., Heuser, T., Manchester, Z., Senesky, D. G., "Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Semiconductor Devices," TechRxiv Preprint, 2021. [PDF]

2. Eisner, S. R., Alpert, H. S., Chapin, C. A., Yalamarthy, A. S., Satterthwaite, P. F., Nasiri, A., Port, S., Ang, S., and Senesky, D. G. "Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment," Presented at the IEEE Aerospace Conference, 2021. [PDF] (Track Best Paper Award)

1. Eisner, S. R., Chapin, C. A., Lu, R., Yang, Y., Gong, S., and Senesky, D. G. “A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500°C in Air.” Sensors, vol. 21, no. 1, pp. 149., 2021. [PDF]

2020

12. Janowitz, J., Holliday, M., Dowling, K., Yeung, B., Kumar, S., Peterson, R., Alpert, H., Chapin, C., Lopez, J., and Senesky, D.G., "Deployment of InAlN/GaN Hall-effect Sensors for Bucket Transformer Monitoring and Forecasting," 2020 IEEE SENSORS, ROtterdam, Netherlands, 2020. [PDF]

11. Krone, A., Alpert, H., Shetty, S., Senesky, D. G., Salamo, G., and Huitink, D. "Degradation of Gallium Nitride-Based Hall-Effect Sensors in High Temperature Environments," Presented at the ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, Anaheim, CA, 2020. [PDF]

10. Chen, R., Kaplan, A. F., and Senesky, D. G. “Closed-Form Orthotropic Constitutive Model for Aligned Square Array Mesostructure.” Additive Manufacturing, vol. 36, pp. 101463, 2020. [PDF]

9. Nasiri, A., Ang, S. S., Cannon, T., Porter, E. V., Porter, K. U., Chapin, C., Chen, R., and Senesky, D. G., "High-Temperature Electronics Packaging for Simulated Venus Condition," J. Microelectronics and Electronic Packaging, vol. 17, no. 2, pp. 59-66, 2020. [PDF]

8. Chen, R., Baich, L., Lauer, J., Senesky, D. G., and Manogharan, G., "Design for Additive Manufacturing - Effects of Part Orientation, Printer Selection, and Infill Density on Mechanical Properties and Production Cost," preprint engrXiv, 2020. [PDF]

7. Peterson, R., Malakoutian, M., Xu, X., Chapin, C., Chowdhury, S., Senesky, D. G., "Analysis of the Mobility-Limiting Mechanisms of the Two-Dimensional Hole Gas on Hydrogen-Terminated Diamond," Physical Review B, vol. 102, pp. 075303, 2020. [PDF]

6. Dowling, K.M., Liu, R., Alpert, H.S., Chapin, C., Benbrook, S., Yalamarthy, A.S., Satterthwaite, P., Köck, H., Ausserlechner, U., Asheghi, M., Goodson, K., and Senesky, D.G., "Low Offset and Reduced Noise Floor In High Biased GaN 2DEG Hall-Effect Plates Investigated with Infrared Microscopy," In Proceedings of Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, SC, 2020. [PDF]

5. Qamar, A., Benbrook, S.R. , Senesky, D.G., and Rais-Zadeh, M., "Silicon-Doped GaN Based SAW Resonators for Extreme Environment Applications," In Proceedings of Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, SC, 2020 (accepted).

4. S.A. Albahrani, D. Mahajan, S. Kargarrazi, D. Schwantuschke, T. Gneiting, D.G. Senesky, and S. Khandelwal, "Extreme Temperature Modeling of AlGaN/GaN HEMTs," IEEE Transactions on Electron Devices,  vol. 67, no. 2, pp. 430-437, 2020. [PDF]

3. Alpert, H.S., Chapin, C.A., Dowling, K.M., Benbrook, S.R., Köck, H., Ausserlechner, U., and Senesky, D.G., "Sensitivity of 2DEG-Based Hall-Effect Sensors at High Temperatures," Review of Scientific Instruments, vol. 91, no. 2, 2020. [PDF] (highlighted as Editor's Pick)

2. Huang, W., Yang, Z., Kraman, M.D., Wang, Q., Ou, Z., Rojo, M.M., Yalamarthy, A.S., Chen, V., Lian, F., Ni, H., Liu, S., Yu, H., Sang, L., Michaels, J., Sievers, D.J., Eden, G., Braun, P., Chen, Q., Gong, S., Senesky, D.G., Pop, E., and Li, X., "Monolithic mTesla Level Magnetic Induction by Self-Rolled-up Membrane Technology,” Science Advances, vol. 6, no. 3, pp. eaay4508, 2020. [PDF]

1. Chen, R., Senesky, D. G., "Effective In-Plane Moduli of Fused Filament Fabrication Material with Aligned Mesostructure," JOM, vol. 72, pp. 1314-1323, 2020. [PDF]

2019

14. Heuser, T., Chapin, C., Holliday, M., Wang, Y., Senesky, D. G., "Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors," https://arxiv.org/abs/1912.02321, 2019. [PDF]

13. Chapin, C. A., Benbrook, S. R., Leblanc, C., Senesky, D. G., "Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300°C," preprint arXiv: 1912.05667, 2019. [PDF]

12. Chen, R., Senesky, D. G., "A Closed-Form Orthotropic Constitutive Model for Fused Filament Fabrication Materials," preprint engrXiv, 2019. [PDF]

11. Yalamarthy, A.S., Rojo, M.M., Bruefach, A., Boone, D., Dowling, K.M., Satterthwaite, P.F., Goldhaber-Gordon, D., Pop, E., and Senesky, D.G., "Significant Phonon Drag at Room Temperature in the AlGaN/GaN 2D Electron Gas Revealed by Varying GaN Thickness," Nano Letters, vol. 19, no. 6, pp. 3770-3776, 2019. [PDF]

10. Kargarrazi, S., Elahipanah, H., Tong, Z., Senesky, D.G., and Zetterling, C-M., "500°C SiC-based driver IC for SiC power MOSFETs," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 115-118. [PDF]

9. Holliday, M., Ramirez, A., Settle, C., Tatum, T., Senesky, D.G., and Manchester, Z., "PyCubed: An Open-Source, Radiation-Tested CubeSat Platform Programmable Entirely in Python," Proceedings of the AIAA/USU Conference on Small Satellites, Logan, UT, 2019. [PDF]

8. Kargarrazi, S., Yalamarthy, A.S., Satterthwaite, P.F., Blankenberg, S.W., Chapin, C.A., and Senesky, D.G., "Stable Operation of AlGaN/GaN HEMTs at 400°C in air for 25 hours," in IEEE Journal of the Electron Devices Societydoi: 10.1109/JEDS.2019.2937008, 2019. [PDF]

7. Kargarrazi, S., Elahipanah, H., Saggini, S., Senesky, D.G., and Zetterling, C-M. "500°C SiC PWM Integrated Circuit," in IEEE Transactions on Power Electronics, vol. 34, no. 3, pp. 1997-2001,  2019. [PDF]

6. Alpert, H.S., Yalamarthy, A.S., Jens, E., Rabinovich, J., Satterthwaite, P.F., Karp, A., and Senesky, D.G., "GaN Photodetector Measurements of UV Emission from Hybrid Rocket Motor Igniter Plume," IEEE Aerospace Conference, Big Sky MT, 2019. [PDF]

5. Brandt, L., Yalamarthy, A.S., Satterthwaite, P.F., Vaziri, S., Benbrook, S., Pop, E., and Senesky, D.G., "Graphene as a Diffusion Barrier in High-Temperature Electronics," In Proceedings of APS March Meeting, Boston MA, 2019.

4. Satterthwaite, P.F., Yalamarthy, A.S., Vaziri, S., Rojo, M. M., Pop, E., and Senesky, D.G., "Process-induced anomalous current transport in graphene/InAlN/GaN heterostructured diodes," In Proceedings of IEEE International Reliability Physics Symposium (IRPS), Monterey CA, 2019.

3. Peterson, R., and Senesky, D.G., “Modeling of radiation-induced defect recovery in 3C-SiC under high field bias conditions,” Comput. Mater. Sci., vol. 161, pp. 10–15, 2019. [PDF]

2. Dowling, K.M., Alpert, H.S., Yalamarthy, A.S., Satterthwaite, P.F., Kumar, S., Köck, H., Ausserlechner, U., and Senesky, D.G., "Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall Plates using Current Spinning," IEEE Sensors Lett., vol. 3, no. 3, 2019. [PDF]

1. Alpert, H.S., Dowling, K.M., Chapin, C.A., Yalamarthy, A.S., Benbrook, S.R., Köck, H., Ausserlechner, U., and Senesky, D.G., "Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors," IEEE Sensors, vol. 19, no. 10, pp. 3640-3646, 2019. [PDF]

2018

12. Miller, R.A., So, H., Heuser, T., and Senesky, D.G., "High-temperature Ultraviolet Photodetectors: A Review," preprint arXiv:1809.07396, 2018. [PDF]

11. Satterthwaite, P.F., Yalamarthy, A.S., Scandrette, N.A., Newaz, A.K.M., and Senesky, D.G., "High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer," ACS Photonics, vol. 5, no. 11, pp. 4277-4282, 2018. [PDF]

10. Ngyuen, T.-K., Phan, H.-P., Dowling, K.M., Dinh, T., Foisal, A.R.M., Senesky, D.G., Nguyen, N.-T., and Dao, D.V., "Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures" Materials & Design, vol. 8, pp. 441-445, 2018. [PDF]

9. Phan, H.-P., Dowling, K.M., Ngyuen, T.-K., Chapin, C.A., Dinh, T., Miller, R.A., Han, J., Iacopi, A., Senesky, D.G., and Nguyen, N.-T., "Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures" RSC Advances, vol. 8, pp. 29976-29979, 2018. [PDF]

8. Moon, D.-I, Kim, B., Peterson, R.A., Badokas, K., Seol, M.-L., Senesky, D.G., Han, J.-W., and Meyyappan, M., "A Single Input Multiple Output (SIMO) Variation-Tolerant Nanosensor," ACS Sensors, vol. 3, no. 9, pp. 1782-1788, 2018. [PDF]

7. Phan, H.-P., Dowling, K.M., Ngyuen, T.-K., Dinh, T., Senesky, D.G., Namazu, T., Dao, D.V., and Nguyen, N.-T., "Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure," Materials & Design, vol. 156, pp. 16, 2018. [PDF]

6. Phan, H.-P., Nguyen, T.-K., Dinh, T., Cheng, H.H., Mu, F., Iacopi, A., Hold, L., Suga, T., Dao, D., Senesky, D.G., and Nguyen, N.T., "Strain effect in highly doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement," Physica Status Solidi A, vol. 215, iss. 24, no. 1800288, 2018. [PDF]

5. Yalamarthy, A.S., Rojo, M.M., Bruefach, A., Pop, E. and Senesky, D.G.,"Low-Temperature Seebeck Coefficient Enhancement in Gated AlGaN/GaN Heterostructures," MRS Spring Meeting, Phoenix, AZ, 2018.

4. Yalamarthy, A.S., Miller, R.A., Dowling, K.M., and Senesky, D.G.,"Piezoelectric 2DEG "Metal" Electrodes for High Responsivity, Low Dark Current AlGaN/GaN Photodetectors," In Proceedings of Compound Semiconductor Week (CSW), Boston, MA, 2018.

3. Chapin, C.A., Dowling, K.M., Phan, H.P., Chen, R., and Senesky, D.G.,"Temperature-Dependent Transient Behavior of AlGaN/GaN High Electron Mobility Pressure Sensors," In Proceedings of Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, SC, 2018.

2. Dowling, K.M, Alpert, H.S., Zhang, P., Ramirez, A.N., Yalamarthy, A.S., Köck, H., Ausserlechner, U., and Senesky, D.G. , "The Effect of Bias Conditions on AlGaN/GaN 2DEG Hall Plates," In Proceedings of Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, SC, 2018. [PDF]

1. Yalamarthy, A.S., So, H., Rojo, M.M., Suria, A.J., Xu, X., Pop, E., and Senesky, D.G.,"Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering," Advanced Functional Materials, vol. 28, no. 22, 1705823, 2018. [PDF]

2017

14. Miller, R.A., So, H., Chiamori, H. C., Dowling, K.M., Wang, Y., and Senesky, D.G.,"Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation," Applied Physics Letters, vol. 111, no. 24, 241902, 2017. [PDF]

13. Hou, M., Jain, S., So, H., Heuser, T., Xu, X., and Senesky, D.G., "Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600°C in oxidizing and inert environments," Journal of Applied Physics, vol. 122, no. 19, 195102, 2017. [PDF]

12. Miller, R.A., Cruden, B.A., Martinez, R., and Senesky, D. G., "In situ ultraviolet shock radiance measurements using GaN-on-sapphire photodetectors," Review of Scientific Instruments, vol. 88, no. 24, 115004, 2017. [PDF]

11. Chapin, C.A., Miller, R.A., Chen, R., Dowling, K.M., and Senesky, D.G., “InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments,” Sensors and Actuators A, vol. 263, pp. 216-223, 2017. [PDF]

10. Chapin, C.A., Miller, R.A., Chen, R., Dowling, K.M., and Senesky, D.G., “Low-temperature and pressure response of InAlN/GaN ring-shaped high electron mobility transistor,” In Proceedings of Solid-State Sensors, Actuators and Microsystems Workshop, Kaohsiung, Taiwan, 2017. [PDF]

9. Yalamarthy, A.S., So, H., and Senesky, D.G., "Enhancement of thermoelectric characteristics in AlGaN/GaN films deposited on inverted pyramidal Si surfaces," Applied Physics Letters, vol. 111, no.2, 021902, 2017. [PDF]

8. Han, J., Peterson, R., Moon, D., Senesky, D.G., and Meyyappan, M., "Monolithically Integrated Microheater for On-Chip Annealing of Oxide Defects," IEEE Electron Device Letters, vol. 38, no. 7, 831, 2017. [PDF]

8. Suria, A., Yalamarthy, A., Heuser, T., Bruefach, A., Chapin, C., So, H., and Senesky, D.G., "Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600°C in air," Applied Physics Letters, vol. 110, no.25, 253505, 2017. [PDF]

7. So, H., and Senesky, D.G., "Effect of frost formation on operation of GaN ultraviolet photodetectors at low temperature," IEEE Sensors Journal, vol.17, no.15, pp. 4752-4756, 2017. [PDF]

6. So, H., Lim, J., Suria, A., and Senesky, D.G., "Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surface," Applied Surface Science, vol. 409, pp. 91-96, 2017. [PDF]

5. Dowling, K.M., So, H., Toor, A., Chapin, C.A., and Senesky, D.G., "Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wirebonding," Microelectronic Engineering, vol. 173, pp. 54-57, 2017. [PDF]

4. Dowling, K.M., Ransom, E.R., and Senesky, D.G., "Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching," IEEE Journal of Microelectromechanical Systems, vol. 26, no. 1, pp.135-142, 2017. [PDF]

3. Ransom, E.H., Dowling, K.M., Rocca-Bejar, D., Palko, J.W., and Senesky, D.G., "High-throughput pulsed laser manufacturing etch process for copmlex and released structures from bulk 4H-SiC," In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Las Vegas, Nevada, pp. 671-674, 2017. [PDF]

2. Chen, R., Ramachandran, A., Liu, C., Chang, F., Senesky, D. G., “Tsai-Wu Analysis of a Thin-Walled 3D-Printed Polylactic Acid (PLA) Structural Bracket,” In Proceedings of the 58th AIAA/ASCE/ASC Structures, Structural Dynamics, and Materials Conference, Grapevine, TX, 2017. [PDF]

1. Hou, M., So, H., Suria, A.J., Yalamarthy, A.S. and Senesky, D.G., "Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In-situ Heating," IEEE Electron Device Letters, vol. 38, no. 1, pp. 56-59, 2017. [PDF]

2016

10. Suria, A.J., Yalamarthy, A.S., So, H., and Senesky, D.G., "DC Characteristics of ALD-Grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °C in Air," Semiconductor Science and Technology, vol. 31, no. 11, 115017, 2016. [PDF]

9. Miller, R. A., So, H., Chiamori, H. C., Suria, A., Chapin, C. A., and Senesky, D. G., "A Microfabricated Sun Sensor Using GaN-on-Sapphire Ultraviolet Photodetector Arrays," Review of Scientific Instruments, vol. 87, no. 9, 095003, 2016. [PDF]

8. Miller, R. A., Chapin, C., Dowling, K., Chen, R., Suria, A., and Senesksy, D. G., "Low-Temperature Operation of Gallium Nitride Based Ultraviolet Photodetectors," In Proceedings of AIAA SPACE, Long Beach, CA, 2016. [PDF]

7. So, H and Senesky, D.G., "Rapid Fabrication and Packaging of AlGaN/GaN High-Temperature Ultraviolet Photodetectors Using Direct Wire Bonding," Journal of Physics D, vol. 49, no. 28, 285109, 2016. [PDF]

6. Hou, M., Suria, A.J., Yalamarthy, A.S., So, H. and Senesky, D.G., "2DEG-Heated AlGaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems," Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, SC, 2016. [PDF]

5. So, H., Lim, J., and Senesky, D.G., "Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors," IEEE Sensors Journal, vol. 16, no. 10, pp. 3633-3639, 2016. [PDF]

4. So, H., Hou, M., Jain, S. R., Lim, J., and Senesky, D.G., "Interdigitated Pt-GaN Schottky Interfaces for High-Temperature Soot-Particulate Sensing," Applied Surface Science, vol. 368, pp.104-109, 2016. [PDF]

3. Yalamarthy, A.S., and Senesky, D.G., "Strain- and Temperature-Induced Effects in AlGaN/GaN High Electron Mobility Transistors," Semiconductor Science and Technology, vol. 31, no. 3, 035024, 2016. [PDF]

2. So, H. and Senesky, D.G., "Low-Resistance Gateless High Electron Mobility Transistors Using Three-Dimensional Inverted Pyramidal AlGaN/GaN Surfaces," Applied Physics Letters, vol. 108, no. 1, 012104, 2016.[PDF]

1. Xu, X., Zhong, J., So, H., Norvilas, A., Sommerhalter, C., Senesky, D.G. and Tang, M., "Wafer-Level MOCVD Growth of AlGaN/GaN-on-Si HEMT Structures with Ultra-High Room Temperature 2DEG Mobility," AIP Advances, vol. 6, pp. 115016, 2016. [PDF]

2015

4. Dowling, K.M., Suria, A.J., Shankar, A., Chapin, C.A., and Senesky, D.G. "Multilayer Etch Masks for 3-Dimensional Fabrication of Robust Silicon Carbide Microsctructures", In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Estoril, Portugal, 2015. [PDF]

3. Dowling, K.M., Suria, A.J., Won, Y., Shankar, A., Lee, H., Asheghi, M., Goodson, K.E., Senesky, D.G., "Inductive Coupled Plasma Etching of High Aspect Ratio Silicon Carbide Microchannels for Localized Cooling", In Proceedings of ASME International Technical Conference on Packaging and Integration of Electronic and Photonic Microsystems and ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels, InterPACKICNMM2015, San Francisco, California, USA, 2015.

2. Suria, A. J., Chiamori, H. C., Shankar A. and Senesky, D. G., “Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition”, In Proceedings of SPIE 9491, Sensors for Extreme Harsh Environments II, Baltimore, MD, 2015. [PDF]

1. Chiamori, H.C., Miller, R., Suria, A., Broad, N. and Senesky, D.G. "Irradiation Effects on Graphene-Enhanced Gallium Nitride (GaN) Metal-Semiconductor-Metal (MSM) Ultraviolet Photodetectors", In Proceedings of SPIE 9491, Sensors for Extreme Harsh Environments II, Baltimore, MD, 2015.

2014

9. Hou, M. and Senesky, D.G., "Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600°C in air," Applied Physics Letters, vol. 105, no. 8, 081905, 2014. [PDF]

8. Zhang, N., Lin, C.-M., Senesky, D.G. and A. P. Pisano, "Temperature sensor based on 4H-silicon carbide pn diode operational from 20°C to 600°C," Applied Physics Letters, vol. 104, no. 7, 073504, 2014. [PDF]

7. Shankar, A., Lin, C. M., Angadi, C., Bhattacharya, S., Broad, N., and Senesky, D. G., "Impact of gamma irradiation on GaN/sapphire surface acoustic wave resonators", in Proc. IEEE International Ultrasonics Symposium (IUS), Chicago, IL, pp. 2560-2563, Sep. 2014.

6. Lien, W.-C., Damrongplasit,N., Senesky, D. G., Liu,T.-J. K., and Pisano,A. P., “4H-SiC N-Channel JFET for operation in high-temperature environments,” IEEE Journal of the Electron Devices Society, vol. 2, no. 6, pp. 164–167, Sep. 2014, doi: 10.1109/JEDS.2014.2355132.

5. Kock, H., Chapin, C.A., Ostermaierd,C., Haberlend, O., and Senesky, D.G., "Emerging GaN-based HEMTs for mechanical sensing within harsh environments", In Proceedings of SPIE 9113, Sensors for Extreme Harsh Environments, Baltimore, MD, 2014.

4. Shankar, A., Angadi,C. ,Bhattacharya,S., Lin,C.-M. and Senesky, D.G., "Characterization of Irradiated and Temperature-compensated Gallium Nitride Surface Acoustic Wave Resonators," In Proceedings of SPIE 9113, Sensors for Extreme Harsh Environments, Baltimore, MD, 2014.

3. Chiamori, H.C., Angadi, C., Suria, A., Shankar, A., Hou, M., Bhattacharya, S., and Senesky, D.G., “Effects of radiation and temperature on gallium nitride (GaN) metal- semiconductor-metal ultraviolet photodetectors,” In Proceedings of of SPIE, vol. 9113, pp. 911304, Baltimore, MD, 2014.

2. Hou, M., Pan, C-C., Asheghi, M. and Senesky, D.G., "Finite element thermal analysis of localized heating of AlGaN/GaN HEMT based sensors", in Proceedings of IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Orlando, FL, 2014.

1. Chiamori, H.C., Hou, M., Chapin, C.A., Shankar, A., and Senesky, D.G., “Characterization of gallium nitride microsystems within radiation and high-temperature environments,” In Proceedings of SPIE MOEMS-MEMS, San Francisco, CA, 2014.

2013

5. Maboudian, R., Carraro, C., Senesky, D.G. and C. Roper, "Advances in silicon carbide science and technology at the micro- and nanoscales," Journal of Vacuum Science & Technology A, vol. 31, no. 5, 050805, 2013. (Top 20 Most Downloaded, June and July 2013) [PDF]

4. Chapin, C.A., Chiamori, H.C., Hou, M., and D.G. Senesky, "Characterization of Gallium Nitride Heterostructures for Strain Sensing at Elevated Temperatures," In Proceedings of the 9th International Workshop on Structural Health Monitoring, IWSHM, Stanford, CA, 2013.

3. Senesky, D.G., "Robust Sensors for Structural Health Monitoring within Harsh Environments," In Proceedings of the 9th International Workshop on Structural Health Monitoring, IWSHM, Stanford, CA, pp. 45-50, 2013.

2. Angadi, C., Chiamori, H., Sundaramoorthy, P., Bhattacharya, S. and Senesky, D.G. , “Characterization of wide bandgap microsystems components for nano, pico & femto-satellite applications,” In Proceedings of the International Astronautical Congress (IAC), Beijing, China, 2013.

1. Lai, Y.-J., Li, W.C. Lin, C.-M., Felmetsger, V.V., Senesky, D.G. and A.P. Pisano, "MEMS Piezoelectric Energy Harvesters for Harsh Environment Sensing," In Proceedings of the 9th International Workshop on Structural Health Monitoring, IWSHM, Stanford, CA, 2013.

2012

2. Lin, C.-M., Chen, Y.-Y., Felmetsger, V.V., Senesky, D.G. and A. P. Pisano, "AlN/3C-SiC composite plate enabling high-frequency and high-Q micromechanical resonators," Advanced Materials, vol. 24, pp.2722–2727, 2012. (Selected for Frontispiece) [PDF]

1. Lin, C.-M., Chen, Y.-Y., Felmetsger, V.V., Vigevani, G., Senesky, D.G. and A.P. Pisano, "Micromachined aluminum nitride acoustic resonators with an epitaxial silicon carbide layer utilizing high-order Lamb wave modes," In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Paris, France, pp. 733-736, 2012.

Pre 2012

27. Lien, W.-C., Tsai, D.-S., Chiu, S.-H., Senesky, D.G., Maboudian, R., Pisano, A.P., and J.-H. He, “Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection,” IEEE Electron Device Letters, vol. 32, pp. 1564 - 1566, 2011. [PDF]

26. Hsia, B., Ferralis, N., Senesky, D.G., Pisano, A.P., Carraro, C. and Maboudian, R., “Epitaxial Graphene Growth on 3C-SiC(111)/AlN(0001)/Si(100),” Electrochemical and Solid-State Letters, vol. 14, no. 2, pp. K13-K15, 2011.[PDF]

25. Lin, C.-M., Lai, Y.-J., Hsu, J.-C., Chen, Y.-Y., Senesky, D.G. and A.P. Pisano, "High-Q aluminum nitride Lamb wave resonators with biconvex edges," Applied Physics Letters, vol. 99, 143501, 2011. [PDF]

24. Wodin-Schwartz, S., Chan, M.W., Mansukhani, K., Pisano, A.P., and D.G. Senesky, “MEMS Sensors for Down-Hole Monitoring of Geothermal Energy Systems,” In Proceedings of the 5th International Conference on Energy Sustainability & 9th Fuel Cell Science, Washington, DC, 2011.

23. Lien, W.-C., Tsai, D.-S., Chiu, S.-H., Senesky, D.G., R. Maboudian, A.P. Pisano, and J.-H. He, “Nanocrystalline SiC Metal-Semiconductor-Metal Photodetector with ZnO Nanorod Arrays for High-Temperature Applications.” In Proceedings of the International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers, Beijing, China, pp. 1875-1878, 2011.

22. Lin, C.-M., Lai, Y.-J., Yen, T.-T., Hsu, J.-C., Chen, Y.-Y., Senesky, D.G., and A.P. Pisano, "Quality factor enhancement in Lamb wave resonators utilizing AlN plates with convex edges," In Proceedings of the International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers, Beijing, China, pp. 1512-1515, 2011.

21. Lin, C.-M., Lien, W.-C, Felmetsger, V., Hopcroft, M.A., Senesky, D.G. and A.P. Pisano, “AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices,” Applied Physics Letters, vol. 97, 141907, 2010. [PDF]

20. Lien, W.-C., Cheng, K.B., Senesky, D.G., Carraro, C., Pisano, A.P., and R. Maboudian, “Growth of 3C-SiC/AlN/Si(100) layered structure with atomically abrupt interface via modified precursor feeding procedure,” Electrochemical and Solid-State Letters, vol. 13, no. 7, pp. D53-D56, 2010. [PDF]

19. Lai, Y.J., Senesky, D.G. and A.P. Pisano, “Genetic Algorithm Optimization for MEMS Cantilevered Piezoelectric Energy Harvesters,” In Proceedings of the International Workshop on Power MEMS, Leuven, Belgium, 2010.

18. Wodin-Schwartz, S., Hopcroft, M.A., Senesky, D.G. and A.P. Pisano “MEMS Sensing in an In-Cylinder Combustion Environment, In Proceedings of the International Workshop on Power MEMS, Leuven, Belgium, 2010.

17. Liu, F., Hsia, B., Senesky, D.G., Carraro, C., Pisano, A.P., and R. Maboudian, “Ohmic Contact With Enhanced Stability to Polycrystalline Silicon Carbide Via Carbon Interfacial Layer,” In Proceedings of the Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, South Carolina, 2010.

16. Lin, C.-M., Lien, W.-C, Felmetsger, V., Senesky, D.G., Hopcroft, M.A. and A.P. Pisano, “Growth of Highly C-Axis Oriented AlN Films on 3C-SiC/Si Substrate,” In Proceedings of the Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, South Carolina, 2010.

15. Senesky, D.G., and A.P. Pisano, “Aluminum Nitride as a Masking Material for the Plasma Etching of Silicon Carbide Structures,” In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Hong Kong, 2010.

14. Yen, T.-T., Lin, C.M., Zhao, X., Senesky, D.G., Hopcroft, M.A., and A.P. Pisano, “Characterization of Aluminum Nitride Lamb Wave Resonators Operating At 600°C For Harsh Environment RF Applications,” In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Hong Kong, 2010.

13. Lin, C.-M., Chen, Y.Y., Felmetsger, V.V., Yen, T.-T., Lien, W.-C., Senesky, D.G., and A.P. Pisano, "Surface acoustic wave propagation properties in AlN/3C-SiC/Si composite structure," In Proceedings of the IEEE International Ultrasonics Symposium, San Diego, CA, pp. 1696-1699, Oct. 2010.

12. Yen, T-.T., C.-M. Lin, C.-M., Hoprcoft, M.A. Kuypers, J.H., Senesky, D.G., and A. P. Pisano, "Synthesis of narrowband AlN Lamb wave ladder-type filters based on overhang adjustment," In Proceedings of the IEEE International Ultrasonics Symposium, San Diego, CA, pp. 970-973, Oct. 2010.

11. Senesky, D.G., Jamshidi, B., Cheng, K. B., and A.P. Pisano, “Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: a Review,” IEEE Sensors Journal, vol. 9, no. 11, pp. 1472-1478, 2009. [PDF]

10. Myers, D.R., Cheng, K.B., Jamshidi, B., Azevedo, R.G., Senesky, D.G., Chen, L., Mehregany, M., Wijesundara, M.B.J., and A.P. Pisano, “A Silicon Carbide Resonant Tuning Fork for Micro-Sensing Applications in High Temperature and High G-Shock Environments,” Journal of Micro/Nanolithography, MEMS, and MOEMS, vol. 8, no. 2, 021116, 2009. [PDF]

9. Lien, W.C., Cheng, K.B., Senesky, D.G., Carraro, C., Pisano, A.P., and R. Maboudian “Epitaxial Growth of 3C-SiC on AlN/Si (100) via Methyltrichlorosilane-based Chemical Vapor Deposition” In Proceedings of the International Workshop on 3C-SiC Hetero-epitaxy, Catania, Italy, 2009.

8. Park, S.W., Senesky, D.G., and A.P. Pisano, “Electrodeposition of Permalloy in Deep Silicon Trenches without Edge-Overgrowth Utilizing Dry Film Photoresist,” In Proceedings of the IEEE I nternational Conference on Micro Electro Mechanical Systems, IEEE MEMS, Sorrento, Italy, 2009.

7. K. B. Cheng, D. R. Myers, B. Jamshidi, R. G. Azevedo, Jones (aka Senesky), D.G., M. Mehregany, M. B. J. Wijesundara, and A. P. Pisano, “High Resolution Silicon Carbide Strain Gauge at 600oC,” In Proceedings of Asia-Pacific Conference on Transducers and Micro-Nano Technology, APCOT, 2008.

6. Azevedo, R.G., Jones (aka Senesky), D.G., Jog, A.V., Jamshidi, B., Myers, D.R., Chen, L., Fu, X., Mehregany, M., Wijesundara, M.B.J., and A.P. Pisano, “A SiC MEMS Resonant Strain Sensor for Harsh Environment Applications,” IEEE Sensors Journal, vol. 7, no. 4, pp. 568-576, 2007. [PDF]

5. D. G. Jones (aka Senesky), and A.P. Pisano, “Ion Beam Sputter Deposition of Silicon Carbide for Vacuum Encapsulation,” In Proceedings of the MicroElectronics Packaging & Test Engineering Council (MEPTEC) MEMS Symposium, San Jose, California, 2007.

4. Azevedo, R. G., Zhang, J., Jones (aka Senesky), D.G., Myers, D. R., Jog, A.V., Jamshidi, B., Wijesundara, M.B.J., Maboudian, R., and A.P. Pisano, “Silicon Carbide Coated MEMS Strain Sensor for Harsh Environment Applications, In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Kobe, Japan, 2007.

3. Jones (aka Senesky), D.G., Azevedo, R. G., Chan, M. W., Pisano, A. P., and M. B. J. Wijesundara, “Low Temperature Ion Beam Sputter Deposition of Amorphous Silicon Carbide for Vacuum Encapsulation,” In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Kobe, Japan, 2007.

2. Jones (aka Senesky), D.G., and A.P. Pisano, “Fabrication of Ultra Thick Ferromagnetic Structures in Silicon,” In Proceedings of ASME International Mechanical Engineering Congress and Exposition, IMECE, Anaheim, California, 2004.

1. Fernandez-Pello, A. C., Pisano, A. P., Fu, K., Walther, D., Knobloch, A., Martinez, F., Senesky, M., Jones (aka Senesky), D.G., Stoldt, C., and J. Heppner, “MEMS Rotary Engine Power System,” In Proceedings of the International Workshop on Power MEMS, Tsukuba, Japan, 2002.27. Lien, W.-C., Tsai, D.-S., Chiu, S.-H., Senesky, D.G., Maboudian, R., Pisano, A.P., and J.-H. He, “Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection,” IEEE Electron Device Letters, vol. 32, pp. 1564 - 1566, 2011. [PDF]

26. Hsia, B., Ferralis, N., Senesky, D.G., Pisano, A.P., Carraro, C. and Maboudian, R., “Epitaxial Graphene Growth on 3C-SiC(111)/AlN(0001)/Si(100),” Electrochemical and Solid-State Letters, vol. 14, no. 2, pp. K13-K15, 2011.[PDF]

25. Lin, C.-M., Lai, Y.-J., Hsu, J.-C., Chen, Y.-Y., Senesky, D.G. and A.P. Pisano, "High-Q aluminum nitride Lamb wave resonators with biconvex edges," Applied Physics Letters, vol. 99, 143501, 2011. [PDF]

24. Wodin-Schwartz, S., Chan, M.W., Mansukhani, K., Pisano, A.P., and D.G. Senesky, “MEMS Sensors for Down-Hole Monitoring of Geothermal Energy Systems,” In Proceedings of the 5th International Conference on Energy Sustainability & 9th Fuel Cell Science, Washington, DC, 2011.

23. Lien, W.-C., Tsai, D.-S., Chiu, S.-H., Senesky, D.G., R. Maboudian, A.P. Pisano, and J.-H. He, “Nanocrystalline SiC Metal-Semiconductor-Metal Photodetector with ZnO Nanorod Arrays for High-Temperature Applications.” In Proceedings of the International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers, Beijing, China, pp. 1875-1878, 2011.

22. Lin, C.-M., Lai, Y.-J., Yen, T.-T., Hsu, J.-C., Chen, Y.-Y., Senesky, D.G., and A.P. Pisano, "Quality factor enhancement in Lamb wave resonators utilizing AlN plates with convex edges," In Proceedings of the International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers, Beijing, China, pp. 1512-1515, 2011.

21. Lin, C.-M., Lien, W.-C, Felmetsger, V., Hopcroft, M.A., Senesky, D.G. and A.P. Pisano, “AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices,” Applied Physics Letters, vol. 97, 141907, 2010. [PDF]

20. Lien, W.-C., Cheng, K.B., Senesky, D.G., Carraro, C., Pisano, A.P., and R. Maboudian, “Growth of 3C-SiC/AlN/Si(100) layered structure with atomically abrupt interface via modified precursor feeding procedure,” Electrochemical and Solid-State Letters, vol. 13, no. 7, pp. D53-D56, 2010. [PDF]

19. Lai, Y.J., Senesky, D.G. and A.P. Pisano, “Genetic Algorithm Optimization for MEMS Cantilevered Piezoelectric Energy Harvesters,” In Proceedings of the International Workshop on Power MEMS, Leuven, Belgium, 2010.

18. Wodin-Schwartz, S., Hopcroft, M.A., Senesky, D.G. and A.P. Pisano “MEMS Sensing in an In-Cylinder Combustion Environment, In Proceedings of the International Workshop on Power MEMS, Leuven, Belgium, 2010.

17. Liu, F., Hsia, B., Senesky, D.G., Carraro, C., Pisano, A.P., and R. Maboudian, “Ohmic Contact With Enhanced Stability to Polycrystalline Silicon Carbide Via Carbon Interfacial Layer,” In Proceedings of the Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, South Carolina, 2010.

16. Lin, C.-M., Lien, W.-C, Felmetsger, V., Senesky, D.G., Hopcroft, M.A. and A.P. Pisano, “Growth of Highly C-Axis Oriented AlN Films on 3C-SiC/Si Substrate,” In Proceedings of the Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, South Carolina, 2010.

15. Senesky, D.G., and A.P. Pisano, “Aluminum Nitride as a Masking Material for the Plasma Etching of Silicon Carbide Structures,” In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Hong Kong, 2010.

14. Yen, T.-T., Lin, C.M., Zhao, X., Senesky, D.G., Hopcroft, M.A., and A.P. Pisano, “Characterization of Aluminum Nitride Lamb Wave Resonators Operating At 600°C For Harsh Environment RF Applications,” In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Hong Kong, 2010.

13. Lin, C.-M., Chen, Y.Y., Felmetsger, V.V., Yen, T.-T., Lien, W.-C., Senesky, D.G., and A.P. Pisano, "Surface acoustic wave propagation properties in AlN/3C-SiC/Si composite structure," In Proceedings of the IEEE International Ultrasonics Symposium, San Diego, CA, pp. 1696-1699, Oct. 2010.

12. Yen, T-.T., C.-M. Lin, C.-M., Hoprcoft, M.A. Kuypers, J.H., Senesky, D.G., and A. P. Pisano, "Synthesis of narrowband AlN Lamb wave ladder-type filters based on overhang adjustment," In Proceedings of the IEEE International Ultrasonics Symposium, San Diego, CA, pp. 970-973, Oct. 2010.

11. Senesky, D.G., Jamshidi, B., Cheng, K. B., and A.P. Pisano, “Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: a Review,” IEEE Sensors Journal, vol. 9, no. 11, pp. 1472-1478, 2009. [PDF]

10. Myers, D.R., Cheng, K.B., Jamshidi, B., Azevedo, R.G., Senesky, D.G., Chen, L., Mehregany, M., Wijesundara, M.B.J., and A.P. Pisano, “A Silicon Carbide Resonant Tuning Fork for Micro-Sensing Applications in High Temperature and High G-Shock Environments,” Journal of Micro/Nanolithography, MEMS, and MOEMS, vol. 8, no. 2, 021116, 2009. [PDF]

9. Lien, W.C., Cheng, K.B., Senesky, D.G., Carraro, C., Pisano, A.P., and R. Maboudian “Epitaxial Growth of 3C-SiC on AlN/Si (100) via Methyltrichlorosilane-based Chemical Vapor Deposition” In Proceedings of the International Workshop on 3C-SiC Hetero-epitaxy, Catania, Italy, 2009.

8. Park, S.W., Senesky, D.G., and A.P. Pisano, “Electrodeposition of Permalloy in Deep Silicon Trenches without Edge-Overgrowth Utilizing Dry Film Photoresist,” In Proceedings of the IEEE I nternational Conference on Micro Electro Mechanical Systems, IEEE MEMS, Sorrento, Italy, 2009.

7. K. B. Cheng, D. R. Myers, B. Jamshidi, R. G. Azevedo, Jones (aka Senesky), D.G., M. Mehregany, M. B. J. Wijesundara, and A. P. Pisano, “High Resolution Silicon Carbide Strain Gauge at 600oC,” In Proceedings of Asia-Pacific Conference on Transducers and Micro-Nano Technology, APCOT, 2008.

6. Azevedo, R.G., Jones (aka Senesky), D.G., Jog, A.V., Jamshidi, B., Myers, D.R., Chen, L., Fu, X., Mehregany, M., Wijesundara, M.B.J., and A.P. Pisano, “A SiC MEMS Resonant Strain Sensor for Harsh Environment Applications,” IEEE Sensors Journal, vol. 7, no. 4, pp. 568-576, 2007. [PDF]

5. D. G. Jones (aka Senesky), and A.P. Pisano, “Ion Beam Sputter Deposition of Silicon Carbide for Vacuum Encapsulation,” In Proceedings of the MicroElectronics Packaging & Test Engineering Council (MEPTEC) MEMS Symposium, San Jose, California, 2007.

4. Azevedo, R. G., Zhang, J., Jones (aka Senesky), D.G., Myers, D. R., Jog, A.V., Jamshidi, B., Wijesundara, M.B.J., Maboudian, R., and A.P. Pisano, “Silicon Carbide Coated MEMS Strain Sensor for Harsh Environment Applications, In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Kobe, Japan, 2007.

3. Jones (aka Senesky), D.G., Azevedo, R. G., Chan, M. W., Pisano, A. P., and M. B. J. Wijesundara, “Low Temperature Ion Beam Sputter Deposition of Amorphous Silicon Carbide for Vacuum Encapsulation,” In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Kobe, Japan, 2007.

2. Jones (aka Senesky), D.G., and A.P. Pisano, “Fabrication of Ultra Thick Ferromagnetic Structures in Silicon,” In Proceedings of ASME International Mechanical Engineering Congress and Exposition, IMECE, Anaheim, California, 2004.

1. Fernandez-Pello, A. C., Pisano, A. P., Fu, K., Walther, D., Knobloch, A., Martinez, F., Senesky, M., Jones (aka Senesky), D.G., Stoldt, C., and J. Heppner, “MEMS Rotary Engine Power System,” In Proceedings of the International Workshop on Power MEMS, Tsukuba, Japan, 2002.

Book Chapters

2. Senesky, D.G., So, H., Suria, A.J., Yalamarthy, A.S., Jain, S.R., Chapin, C.A., Chiamori, H.C., Hou, M., ”Gallium Nitride Micro-electronics for High-Temperature Environments,” Semiconductor Based Sensors, World Scientific Press, pp. 395-433, 2017.

1. Senesky, D.G. and B. Jamshidi, MEMS Strain Sensors for Intelligent Structural Systems. In S. Mukhopadhyay (Ed.), New Developments in Sensing Technology for Structural Health Monitoring, Springer-Verlag, pp. 63-74, 2011.

Technical Reports

1. Essigmann, M., Shankar, A., and Senesky, D.G., “Smart-Cut Processing for Transfer of High-Temperature Ceramic Materials to Silicon,” NNIN REU Technical Report, 2015. [PDF]

2. Huang, T., Suria, A.J., Suria, and Senesky, D.G., “Deposition of the Immobilization Layer on Gallium Nitride for Extremophile-Based Biosensors,” NNIN REU Technical Report, 2013. [PDF]

3. Senesky, D.G., Lee, E., and S. Selkowitz, “Active Materials for New Energy Efficient Window Glazing Technology: Feasibility Study,” Technical Report for Lawrence Berkeley National Laboratory and Department of Energy, 2011.

 

arXiv:1911.10276

 

arXiv:1912.05667