J. M. Cox et al., “Thermal conductivity of macroporous graphene aerogel measured using high resolution comparative infrared thermal microscopy.” arXiv, May 15, 2023. doi: 10.48550/arXiv.2305.09033.
Z. Li et al., “Synthesis and characterization of UiO-66-NH2 incorporated graphene aerogel composites and their utilization for absorption of organic liquids,” Carbon, vol. 201, pp. 561–567, Jan. 2023, doi: 10.1016/j.carbon.2022.09.015.
Y. Xu et al., “Hall-Effect Sensor Design With Physics-Informed Gaussian Process Modeling,” IEEE Sensors Journal, vol. 22, no. 23, pp. 22519–22528, Dec. 2022, doi: 10.1109/JSEN.2022.3216499.
C. Liu et al., “Nanoindentation characterization of thin film stack structures by finite element analysis and experiments using acoustic emission testing,” Materials Science in Semiconductor Processing, vol. 147, p. 106737, Aug. 2022, doi: 10.1016/j.mssp.2022.106737.
M. Holliday, Z. Manchester, and D. G. Senesky, “On-Orbit Implementation of Discrete Isolation Schemes for Improved Reliability of Serial Communication Buses,” IEEE Transactions on Aerospace and Electronic Systems, vol. 58, no. 4, pp. 2973–2982, Aug. 2022, doi: 10.1109/TAES.2022.3142713.
M. Holliday, T. A. Heuser, Z. Manchester, and D. G. Senesky, “Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices,” IEEE Transactions on Aerospace and Electronic Systems, vol. 58, no. 4, pp. 3326–3336, Aug. 2022, doi: 10.1109/TAES.2022.3148974.
T. A. Heuser, C. A. Chapin, M. A. Holliday, Y. Wang, and D. G. Senesky, “Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors,” Journal of Applied Physics, vol. 131, no. 15, p. 155701, Apr. 2022, doi: 10.1063/5.0077210.
A. Krone et al., “High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors,” Journal of Electronic Packaging, vol. 144, no. 2, Mar. 2022, doi: 10.1115/1.4053765.
C. Liu et al., “Cluster-based acoustic emission signal processing and loading rate effects study of nanoindentation on thin film stack structures,” Mechanical Systems and Signal Processing, vol. 165, p. 108301, Feb. 2022, doi: 10.1016/j.ymssp.2021.108301.
A. V. Lalwani et al., “Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning,” IEEE Sensors Journal, vol. 22, no. 2, pp. 1245–1251, Jan. 2022, doi: 10.1109/JSEN.2021.3130527.
J. J. Frick and D. G. Senesky, “Metal Alloy Synthesis in Microgravity,” in In-Space Manufacturing and Resources, John Wiley & Sons, Ltd, 2022, pp. 269–284. doi: 10.1002/9783527830909.ch14.
T. Heuser, M. Braun, P. McIntyre, and D. G. Senesky, “Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch,” Journal of Applied Physics, vol. 130, no. 17, p. 174503, Nov. 2021, doi: 10.1063/5.0069602.
S. R. Eisner et al., “Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment,” in 2021 IEEE Aerospace Conference (50100), Mar. 2021, pp. 1–12. doi: 10.1109/AERO50100.2021.9438131.
S. R. Eisner, C. A. Chapin, R. Lu, Y. Yang, S. Gong, and D. G. Senesky, “A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500 °C in Air,” Sensors, vol. 21, no. 1, Art. no. 1, Jan. 2021, doi: 10.3390/s21010149.
A. Krone, H. Alpert, S. Shetty, D. G. Senesky, G. Salamo, and D. Huitink, “Degradation of Gallium Nitride-Based Hall-Effect Sensors in High Temperature Environments,” presented at the ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, American Society of Mechanical Engineers Digital Collection, Dec. 2020. doi: 10.1115/IPACK2020-2589.
R. Chen, A. F. Kaplan, and D. G. Senesky, “Closed-form orthotropic constitutive model for aligned square array mesostructure,” Additive Manufacturing, vol. 36, p. 101463, Dec. 2020, doi: 10.1016/j.addma.2020.101463.
A. V. Lalwani et al., “Selective Aqueous Ammonia Sensors Using Electrochemical Stripping and Capacitive-Based Detection,” Meet. Abstr., vol. MA2020-02, no. 66, p. 3344, Nov. 2020, doi: 10.1149/MA2020-02663344mtgabs.
T. Nguyen et al., “Self-powered monolithic accelerometer using a photonic gate,” Nano Energy, vol. 76, p. 104950, Oct. 2020, doi: 10.1016/j.nanoen.2020.104950.
A. Qamar, S. R. Eisner, D. G. Senesky, and M. Rais-Zadeh, “Ultra-High-Q Gallium Nitride SAW Resonators for Applications With Extreme Temperature Swings,” Journal of Microelectromechanical Systems, vol. 29, no. 5, pp. 900–905, Oct. 2020, doi: 10.1109/JMEMS.2020.2999040.
J. Janowitz et al., “Deployment of InAlN/GaN Hall-effect Sensors for Bucket Transformer Monitoring and Forecasting,” in 2020 IEEE SENSORS, Oct. 2020, pp. 1–4. doi: 10.1109/SENSORS47125.2020.9278866.
K. M. Dowling et al., “Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy,” Journal of Microelectromechanical Systems, vol. 29, no. 5, pp. 669–676, Oct. 2020, doi: 10.1109/JMEMS.2020.3013187.
A. Descamps et al., “An approach for the measurement of the bulk temperature of single crystal diamond using an X-ray free electron laser,” Sci Rep, vol. 10, no. 1, Art. no. 1, Sep. 2020, doi: 10.1038/s41598-020-71350-x.
R. Peterson, M. Malakoutian, X. Xu, C. Chapin, S. Chowdhury, and D. G. Senesky, “Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond,” Phys. Rev. B, vol. 102, no. 7, p. 075303, Aug. 2020, doi: 10.1103/PhysRevB.102.075303.
A. Nasiri et al., “High-Temperature Electronics Packaging for Simulated Venus Condition,” Journal of Microelectronics and Electronic Packaging, vol. 17, no. 2, pp. 59–66, Jul. 2020, doi: 10.4071/imaps.1115241.
A. V. Lalwani, L. Mu, K. Woo, M. A. Holiday, D. G. Senesky, and W. A. Tarpeh, “Electro-Chemical Stripping and Capacitive Sensing Enabled Selective and Sensitive Ammonia Water Sensors,” Meet. Abstr., vol. MA2020-01, no. 29, p. 2252, May 2020, doi: 10.1149/MA2020-01292252mtgabs.
R. Chen and D. Senesky, “Effective In-Plane Moduli of Fused Filament Fabrication Material with Aligned Mesostructure,” JOM, vol. 72, no. 3, pp. 1314–1323, Mar. 2020, doi: 10.1007/s11837-019-03963-1.
H. S. Alpert et al., “Sensitivity of 2DEG-based Hall-effect sensors at high temperatures,” Review of Scientific Instruments, vol. 91, no. 2, p. 025003, Feb. 2020, doi: 10.1063/1.5139911.
S. A. Albahrani et al., “Extreme Temperature Modeling of AlGaN/GaN HEMTs,” IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 430–437, Feb. 2020, doi: 10.1109/TED.2019.2960573.
W. Huang et al., “Monolithic mtesla-level magnetic induction by self-rolled-up membrane technology,” Science Advances, vol. 6, no. 3, p. eaay4508, Jan. 2020, doi: 10.1126/sciadv.aay4508.
T.-A. Pham et al., “Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring,” Advanced Science, vol. 7, no. 21, p. 2001294, 2020, doi: 10.1002/advs.202001294.
T.-K. Nguyen et al., “Lithography and Etching-Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation,” Advanced Engineering Materials, vol. 22, no. 4, p. 1901173, 2020, doi: 10.1002/adem.201901173.
S. Kargarrazi, A. S. Yalamarthy, P. F. Satterthwaite, S. W. Blankenberg, C. Chapin, and D. G. Senesky, “Correction to ‘Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air,’” IEEE Journal of the Electron Devices Society, vol. 8, pp. 716–716, 2020, doi: 10.1109/JEDS.2020.3002710.
A. S. Yalamarthy et al., “Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas,” Nano Lett., vol. 19, no. 6, pp. 3770–3776, Jun. 2019, doi: 10.1021/acs.nanolett.9b00901.
S. Kargarrazi, H. Elahipanah, Z. Tong, D. Senesky, and C.-M. Zetterling, “500°C SiC-based driver IC for SiC power MOSFETs,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, pp. 115–118. doi: 10.1109/ISPSD.2019.8757618.
H. S. Alpert et al., “Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors,” IEEE Sensors Journal, vol. 19, no. 10, pp. 3640–3646, May 2019, doi: 10.1109/JSEN.2019.2895546.
R. Peterson and D. Senesky, “Modeling of radiation-induced defect recovery in 3C-SiC under high field bias conditions,” Computational Materials Science, vol. 161, pp. 10–15, Apr. 2019, doi: 10.1016/j.commatsci.2019.01.016.
P. F. Satterthwaite, A. S. Yalamarthy, S. Vaziri, M. M. Rojo, E. Pop, and D. G. Senesky, “Process-induced anomalous current transport in graphene/InAlN/GaN heterostructured diodes,” in 2019 IEEE International Reliability Physics Symposium (IRPS), Mar. 2019, pp. 1–6. doi: 10.1109/IRPS.2019.8720465.
K. M. Dowling et al., “Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall Plates Using Current Spinning,” IEEE Sensors Letters, vol. 3, no. 3, pp. 1–4, Mar. 2019, doi: 10.1109/LSENS.2019.2898157.
H. S. Alpert et al., “Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume,” in 2019 IEEE Aerospace Conference, Mar. 2019, pp. 1–8. doi: 10.1109/AERO.2019.8741713.
L. Brandt et al., “Graphene as a Diffusion Barrier in High-Temperature Electronics,” vol. 2019, p. E17.004, Jan. 2019.
S. Kargarrazi, A. S. Yalamarthy, P. F. Satterthwaite, S. W. Blankenberg, C. Chapin, and D. G. Senesky, “Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air,” IEEE Journal of the Electron Devices Society, vol. 7, pp. 931–935, 2019, doi: 10.1109/JEDS.2019.2937008.
P. Mangaiyarkarasi and P. Lakshmi, “Design of Piezoelectric Energy Harvester Using Intelligent Optimization Techniques,” in 2018 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Dec. 2018, pp. 1–6. doi: 10.1109/PEDES.2018.8707773.
H.-P. Phan et al., “Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure,” Materials & Design, vol. 156, pp. 16–21, Oct. 2018, doi: 10.1016/j.matdes.2018.06.031.
T.-K. Nguyen et al., “Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures,” Materials & Design, vol. 156, pp. 441–445, Oct. 2018, doi: 10.1016/j.matdes.2018.07.014.
D.-I. Moon et al., “A Single Input Multiple Output (SIMO) Variation-Tolerant Nanosensor,” ACS Sens., vol. 3, no. 9, pp. 1782–1788, Sep. 2018, doi: 10.1021/acssensors.8b00510.
H.-P. Phan et al., “Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures,” RSC Adv., vol. 8, no. 52, pp. 29976–29979, Aug. 2018, doi: 10.1039/C8RA05797D.
A. S. Yalamarthy et al., “Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering,” Advanced Functional Materials, vol. 28, no. 22, p. 1705823, 2018, doi: 10.1002/adfm.201705823.
H.-P. Phan et al., “Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement,” physica status solidi (a), vol. 215, no. 24, p. 1800288, 2018, doi: 10.1002/pssa.201800288.
R. A. Miller, H. So, H. C. Chiamori, K. M. Dowling, Y. Wang, and D. G. Senesky, “Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation,” Applied Physics Letters, vol. 111, no. 24, p. 241902, Dec. 2017, doi: 10.1063/1.5005797.
M. Hou et al., “Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600 °C in oxidizing and inert environments,” Journal of Applied Physics, vol. 122, no. 19, p. 195102, Nov. 2017, doi: 10.1063/1.5011178.
R. A. Miller, B. A. Cruden, R. Martinez, and D. G. Senesky, “In situ ultraviolet shock radiance measurements using GaN-on-sapphire photodetectors,” Review of Scientific Instruments, vol. 88, no. 11, p. 115004, Nov. 2017, doi: 10.1063/1.5009583.
C. A. Chapin, R. A. Miller, K. M. Dowling, R. Chen, and D. G. Senesky, “InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments,” Sensors and Actuators A: Physical, vol. 263, pp. 216–223, Aug. 2017, doi: 10.1016/j.sna.2017.06.009.
H. So and D. G. Senesky, “Effect of Frost Formation on Operation of GaN Ultraviolet Photodetectors at Low Temperatures,” IEEE Sensors Journal, vol. 17, no. 15, pp. 4752–4756, Aug. 2017, doi: 10.1109/JSEN.2017.2712639.
A. S. Yalamarthy, H. So, and D. G. Senesky, “Enhancement of thermoelectric characteristics in AlGaN/GaN films deposited on inverted pyramidal Si surfaces,” Applied Physics Letters, vol. 111, no. 2, p. 021902, Jul. 2017, doi: 10.1063/1.4991969.
H. So, J. Lim, A. J. Suria, and D. G. Senesky, “Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surfaces,” Applied Surface Science, vol. 409, pp. 91–96, Jul. 2017, doi: 10.1016/j.apsusc.2017.02.139.
J.-W. Han, R. Peterson, D.-I. Moon, D. G. Senesky, and M. Meyyappan, “Monolithically Integrated Microheater for On-Chip Annealing of Oxide Defects,” IEEE Electron Device Letters, vol. 38, no. 7, pp. 831–834, Jul. 2017, doi: 10.1109/LED.2017.2700326.
A. J. Suria et al., “Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air,” Applied Physics Letters, vol. 110, no. 25, p. 253505, Jun. 2017, doi: 10.1063/1.4986910.
C. A. Chapin, R. A. Miller, R. Chen, K. M. Dowling, and D. G. Senesky, “Low-temperature and pressure response of InAlN/GaN ring-shaped high electron mobility transistors,” in 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Jun. 2017, pp. 786–789. doi: 10.1109/TRANSDUCERS.2017.7994166.
K. M. Dowling, H. So, A. Toor, C. A. Chapin, and D. G. Senesky, “Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding,” Microelectronic Engineering, vol. 173, pp. 54–57, Apr. 2017, doi: 10.1016/j.mee.2017.03.012.
K. M. Dowling, E. H. Ransom, and D. G. Senesky, “Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching,” Journal of Microelectromechanical Systems, vol. 26, no. 1, pp. 135–142, Feb. 2017, doi: 10.1109/JMEMS.2016.2621131.
R. Chen, A. Ramachandran, C. Liu, F.-K. Chang, and D. Senesky, “Tsai-Wu Analysis of a Thin-Walled 3D-Printed Polylactic Acid (PLA) Structural Bracket,” in 58th AIAA/ASCE/AHS/ASC Structures, Structural Dynamics, and Materials Conference, in AIAA SciTech Forum. American Institute of Aeronautics and Astronautics, 2017. doi: 10.2514/6.2017-0567.
E. H. Ransom, K. M. Dowling, D. Rocca-Bejar, J. W. Palko, and D. G. Senesky, “High-throughput pulsed laser manufacturing etch process for complex and released structures from bulk 4H-SiC,” in 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS), Jan. 2017, pp. 671–674. doi: 10.1109/MEMSYS.2017.7863497.
M. Hou, H. So, A. J. Suria, A. S. Yalamarthy, and D. G. Senesky, “Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating,” IEEE Electron Device Letters, vol. 38, no. 1, pp. 56–59, Jan. 2017, doi: 10.1109/LED.2016.2626388.
A. J. Suria, A. S. Yalamarthy, H. So, and D. G. Senesky, “DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °C in air,” Semicond. Sci. Technol., vol. 31, no. 11, p. 115017, Oct. 2016, doi: 10.1088/0268-1242/31/11/115017.
R. A. Miller, H. So, H. C. Chiamori, A. J. Suria, C. A. Chapin, and D. G. Senesky, “A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays,” Review of Scientific Instruments, vol. 87, no. 9, p. 095003, Sep. 2016, doi: 10.1063/1.4962704.
R. A. Miller, C. Chapin, K. Dowling, R. Chen, A. Suria, and D. G. Senesky, “Low-Temperature Operation of Gallium Nitride Based Ultraviolet Photodetectors,” in AIAA SPACE 2016, in AIAA SPACE Forum. American Institute of Aeronautics and Astronautics, 2016. doi: 10.2514/6.2016-5497.
D. G. Senesky et al., “Gallium Nitride Microelectronics for High-Temperature Environments,” in Semiconductor-Based Sensors, WORLD SCIENTIFIC, 2016, pp. 395–433. doi: 10.1142/9789813146730_0012.
H. So and D. G. Senesky, “Rapid fabrication and packaging of AlGaN/GaN high-temperature ultraviolet photodetectors using direct wire bonding,” J. Phys. D: Appl. Phys., vol. 49, no. 28, p. 285109, Jun. 2016, doi: 10.1088/0022-3727/49/28/285109.
H. So, J. Lim, and D. G. Senesky, “Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors,” IEEE Sensors Journal, vol. 16, no. 10, pp. 3633–3639, May 2016, doi: 10.1109/JSEN.2016.2531181.
H. So, M. Hou, S. R. Jain, J. Lim, and D. G. Senesky, “Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing,” Applied Surface Science, vol. 368, pp. 104–109, Apr. 2016, doi: 10.1016/j.apsusc.2016.01.178.
A. S. Yalamarthy and D. G. Senesky, “Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors,” Semicond. Sci. Technol., vol. 31, no. 3, p. 035024, Feb. 2016, doi: 10.1088/0268-1242/31/3/035024.
H. So and D. G. Senesky, “Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces,” Applied Physics Letters, vol. 108, no. 1, p. 012104, Jan. 2016, doi: 10.1063/1.4939509.
K. M. Dowling et al., “Inductive Coupled Plasma Etching of High Aspect Ratio Silicon Carbide Microchannels for Localized Cooling,” presented at the ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels, American Society of Mechanical Engineers Digital Collection, Nov. 2015. doi: 10.1115/IPACK2015-48409.
H. C. Chiamori, R. Miller, A. Suria, N. Broad, and D. G. Senesky, “Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors,” in Sensors for Extreme Harsh Environments II, SPIE, May 2015, pp. 6–12. doi: 10.1117/12.2178091.
A. J. Suria, H. C. Chiamori, A. Shankar, and D. G. Senesky, “Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition,” in Sensors for Extreme Harsh Environments II, SPIE, May 2015, pp. 6–13. doi: 10.1117/12.2179129.
K. M. Dowling, A. J. Suria, A. Shankar, C. A. Chapin, and D. G. Senesky, “Multilayer etch masks for 3-dimensional fabrication of robust silicon carbide microstructures,” in 2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Jan. 2015, pp. 284–287. doi: 10.1109/MEMSYS.2015.7050944.
A. Shankar, C.-M. Lin, C. Angadi, S. Bhattacharya, N. Broad, and D. G. Senesky, “Impact of gamma irradiation on GaN/sapphire surface acoustic wave resonators,” in 2014 IEEE International Ultrasonics Symposium, Sep. 2014, pp. 2560–2563. doi: 10.1109/ULTSYM.2014.0639.
M. Hou and D. G. Senesky, “Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air,” Applied Physics Letters, vol. 105, no. 8, p. 081905, Aug. 2014, doi: 10.1063/1.4894290.
H. Köck, C. A. Chapin, C. Ostermaier, O. Häberlen, and D. G. Senesky, “Emerging GaN-based HEMTs for mechanical sensing within harsh environments,” in Sensors for Extreme Harsh Environments, SPIE, Jun. 2014, pp. 69–76. doi:10.1117/12.2051568.
A. Shankar, C. Angadi, S. Bhattacharya, C.-M. Lin, and D. G. Senesky, “Characterization of irradiated and temperature-compensated gallium nitride surface acoustic wave resonators,” presented at the SPIE Sensing Technology + Applications, D. G. Senesky and S. Dekate, Eds., Baltimore, Maryland, USA, Jun. 2014, p. 91130B. doi: 10.1117/12.2050838.
H. C. Chiamori et al., “Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors,” vol. 9113, p. 911304, Jun. 2014, doi: 10.1117/12.2050983.
M. Hou, Chi-Chun Pan, M. Asheghi, and D. G. Senesky, “Finite element thermal analysis of localized heating in AlGaN/GaN HEMT based sensors,” Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), pp. 25–30, May 2014, doi: 10.1109/ITHERM.2014.6892260.
H. C. Chiamori, M. Hou, C. A. Chapin, A. Shankar, and D. G. Senesky, “Characterization of gallium nitride microsystems within radiation and high-temperature environments,” vol. 8975, p. 897507, Mar. 2014, doi: 10.1117/12.2046690.
N. Zhang, C.-M. Lin, D. G. Senesky, and A. P. Pisano, “Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C,” Applied Physics Letters, vol. 104, no. 7, p. 073504, Feb. 2014, doi: 10.1063/1.4865372.
A. Angadi, H. Chaimori, P. Sundaramoorthy, S. Bhattacharya, and D. Senesky, “Characterization of wide bandgap microsystems components for nano, pico and femto satellite applications: 64th International Astronautical Congress, Beijing, China,” Proceedings of the 64th IAC 2013, pp. 1–9, 2014.
R. Maboudian, C. Carraro, D. G. Senesky, and C. S. Roper, “Advances in silicon carbide science and technology at the micro- and nanoscales,” Journal of Vacuum Science & Technology A, vol. 31, no. 5, p. 050805, Jun. 2013, doi: 10.1116/1.4807902.
C. A. Chapin, H. C. Chiamori, M. Hou, and D. G. Senesky, “Characterization of Gallium Nitride Heterostructures for Strain Sensing at Elevated Temperatures,” Structural Health Monitoring 2013, vol. 0, no. 0, Art. no. 0, 2013. Available: https://www.dpi-proceedings.com/index.php/shm2013/article/view/22965
S. Wodin-Schwartz, M. W. Chan, K. R. Mansukhani, A. P. Pisano, and D. G. Senesky, “MEMS Sensors for Down-Hole Monitoring of Geothermal Energy Systems,” presented at the ASME 2011 5th International Conference on Energy Sustainability, American Society of Mechanical Engineers Digital Collection, Mar. 2012, pp. 965–972. doi: 10.1115/ES2011-54699.
C.-M. Lin, Y.-Y. Chen, V. V. Felmetsger, G. Vigevani, D. G. Senesky, and A. P. Pisano, “Micromachined aluminum nitride acoustic resonators with an epitaxial silicon carbide layer utilizing high-order Lamb wave modes,” 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), pp. 733–736, Jan. 2012, doi: 10.1109/MEMSYS.2012.6170290.
C.-M. Lin, Y.-Y. Chen, V. V. Felmetsger, D. G. Senesky, and A. P. Pisano, “AlN/3C–SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators,” Advanced Materials, vol. 24, no. 20, pp. 2722–2727, 2012, doi: 10.1002/adma.201104842.
W.-C. Lien et al., “Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection,” IEEE Electron Device Letters, vol. 32, no. 11, pp. 1564–1566, Nov. 2011, doi: 10.1109/LED.2011.2164570.
C.-M. Lin et al., “Quality factor enhancement in lamb wave resonators utilizing AlN plates with convex edges,” in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, Jun. 2011, pp. 1512–1515. doi: 10.1109/TRANSDUCERS.2011.5969687.
W.-C. Lien et al., “Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications,” in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, Jun. 2011, pp. 1875–1878. doi: 10.1109/TRANSDUCERS.2011.5969795.
D. G. Senesky and B. Jamshidi, “MEMS Strain Sensors for Intelligent Structural Systems,” in New Developments in Sensing Technology for Structural Health Monitoring, S. C. Mukhopadhyay, Ed., in Lecture Notes in Electrical Engineering. Berlin, Heidelberg: Springer, 2011, pp. 63–74. doi: 10.1007/978-3-642-21099-0_4.
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